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Fig. 11 | Advanced Structural and Chemical Imaging

Fig. 11

From: Assessment of off-axis and in-line electron holography for measurement of potential variations in Cu(In,Ga)Se2 thin-film solar cells

Fig. 11

Potential wells at CIGS grain boundary. Phase variation profiles extracted from the phase images in Fig. 10d–f, i.e., from the indicated region 1 (a) and from the indicated region 2 (b) of the grain boundary. Potential wells in the range of 130–1500 mV are measured depending on the used microscope and the position of the grain boundary from where the profile is extracted

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