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Table 2 Two CIGS thin-film solar cells were produced having a standard (low Cu content) CIGS absorber layer or a CIGS with high Cu content

From: Assessment of off-axis and in-line electron holography for measurement of potential variations in Cu(In,Ga)Se2 thin-film solar cells

 

Standard CIGS solar cell (low Cu content)

Solar cell with CIGS of high Cu content

GGI (CIGS) [−]

0.36

0.37

CGI (CIGS) [−]

0.79

0.99

\(V_{\text {OC}}\) [V]

0.70

0.65

\(J_{\text {SC}}\) [mAcm\(^{-2}\)]

34.6

34.0

FF [%]

76.7

71.1

\(\eta\) [%]

18.6

15.7

  1. Their characteristic properties are summarized below, whereas \(V_{\text {OC}}\) is the open-circuit voltage, \(J_{\text {SC}}\) is the short-circuit current density, FF is the fill factor, and \(\eta\) the efficiency of the completed solar cell