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Fig. 3 | Advanced Structural and Chemical Imaging

Fig. 3

From: Analysis of crystal defects by scanning transmission electron microscopy (STEM) in a modern scanning electron microscope

Fig. 3

30 keV cross-sectional BF-STEM images of the epitaxial GaN layer and corresponding TED pattern for different two-beam conditions a, d g(000–2), b, e g(1–210), and c, f g(1–100). ZB and strongly excited Bragg reflections are marked in df. The settings of the α- and β-tilt angle are given in the BF-STEM images. Scale bars in a and d apply to all BF-STEM images and diffraction patterns, respectively. Dark spot-like regions result from contamination that occurred during sample orientation by acquiring diffraction patterns with a high beam current

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