Fig. 4From: Analysis of crystal defects by scanning transmission electron microscopy (STEM) in a modern scanning electron microscope30 keV STEM cross-section images of the same region in GaN taken under different conditions a BF-STEM image with g(0002) and sg = 0, b BF-STEM image with g(0002) and sg = 0.054 nm−1, c DF-STEM image with g(0002) and sg = 0 and d (g, 3g) weak-beam DF-STEMBack to article page