Fig. 5From: Analysis of crystal defects by scanning transmission electron microscopy (STEM) in a modern scanning electron microscopeBF-STEM images of the same specimen region in GaN and corresponding TED pattern for g(1–100)/g(–1100) taken at a, d 30 keV, b, e 20 keV, and c, f 10 keV. ZB and strongly excited Bragg reflections are marked in d–f. Scale bar in a applies to all BF-STEM imagesBack to article page