Fig. 6From: Analysis of crystal defects by scanning transmission electron microscopy (STEM) in a modern scanning electron microscope30 keV BF-STEM cross-section images of the epitaxial GaN layer and corresponding TED pattern for different two-beam conditions using (a, d) g(–1100), (b, e) g(0002), (c, f) g(1–210). Scale bars in a and d apply to all BF-STEM images and diffraction patterns, respectivelyBack to article page