Table 1 Composition of layers (phases) constituting the investigated CMOS device
From: Optimal principal component analysis of STEM XEDS spectrum images
Phase notation | Composition (at.%) |
|---|---|
Si | 100% Si |
SiO-A | 33% Si–67% O |
SiO-B | 29% Si–57% O–14% N |
HfO | 33% Hf–67% O |
TiN-A | 50% Ti–50% N |
TiN-B | 50% Ti–40% N–10% O |
TiN-C | 45% Ti–45% N–10% Al |
TaN | 50% Ta–50% N |
Al | 80% Al–20% Ti |
AlO | 40% Al–60% O |
SiN | 43% Si–57% N |